Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2006-11-07

2006-11-07

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S257000, C438S199000

Reexamination Certificate

active

07132332

ABSTRACT:
A polysilicon film and the like are patterned to form n−diffusion layers on a silicon substrate. Subsequently, an outer edge of an Al2O3film is made retreat to be smaller than that of a gate electrode by performing isotropic etching of the Al2O3film, using a solution of sulfuric acid with hydrogen peroxide. A silicon oxide film, a silicon nitride film, the polysilicon film and the like are hardly removed although the solution of sulfuric acid with hydrogen peroxide exhibits higher etching rate to the Al2O3film, enabling almost exclusive etching of the Al2O3film at a high selectivity ratio. Subsequently, another polysilicon film is formed so as to fill spaces formed after the retreat of the Al2O3film under the silicon oxide film. Subsequently, a sidewall insulating film is formed by remaining portions of the later polysilicon film in the spaces by performing RIE, oxidation, or the like of the later polysilicon film.

REFERENCES:
patent: 6917072 (2005-07-01), Noguchi et al.
patent: 6924186 (2005-08-01), Sandhu et al.
patent: 6952032 (2005-10-01), Forbes et al.
patent: 6958937 (2005-10-01), Forbes
patent: 2003/0080372 (2003-05-01), Mikolajick
patent: 2005/0082599 (2005-04-01), Forbes
Patent Abstracts of Japan, Publication No. 2001168219, dated Jun. 22, 2001.

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