Methods of manufacturing MOSFETs in semiconductor devices

Details Methods of manufacturing MOSFETs in semiconductor devices Methods of manufacturing MOSFETs in semiconductor devices

2006-10-10

2006-10-10

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S303000, C438S413000, C438S558000

Reexamination Certificate

active

07118976

ABSTRACT:
Methods of fabricating MOSFETs in semiconductor/r devices are disclosed. One example method may include forming an isolation layer on a semiconductor substrate and forming a capping layer thereon, forming an epitaxial active region which is not covered with the isolation layer on said semiconductor substrate by using selectively epitaxial growth, and forming a gate dielectric layer and a gate electrode on said epitaxial active region, sequentially. The example method may also include forming a source/drain plug spaced apart from the both sides of said gate electrode in said epitaxial active region, forming a source/drain into said epitaxial active region on which said source/drain plug is formed, forming an interlayer dielectric layer on the entire surface of the resultant structure after the source/drain is formed; and forming contacts in said interlayer dielectric layer, wherein said contacts are connected to said gate electrode and said source/drain plug, respectively.

REFERENCES:
patent: 5633201 (1997-05-01), Choi
patent: 6462366 (2002-10-01), Hsu et al.
patent: 6521508 (2003-02-01), Cheong et al.
patent: 6717202 (2004-04-01), Sugawara et al.
patent: 2001/0019872 (2001-09-01), Havemann
patent: 2002/0192868 (2002-12-01), Kim

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