Methods of forming a multi-layered structure using an atomic...

Details Methods of forming a multi-layered structure using an atomic... Methods of forming a multi-layered structure using an atomic...

2006-11-14

2006-11-14

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S240000, C438S758000, C438S786000

Reexamination Certificate

active

07135422

ABSTRACT:
Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.

REFERENCES:
patent: 6420279 (2002-07-01), Ono et al.
patent: 2003/0040153 (2003-02-01), Kim et al.
patent: 2003/0234417 (2003-12-01), Raajimakers et al.
patent: 2004/0171280 (2004-09-01), Conley et al.
patent: 000013654 (2000-03-01), None
patent: 2001-0097641 (2001-11-01), None

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