Method for fabricating semiconductor device capable of...

Details Method for fabricating semiconductor device capable of... Method for fabricating semiconductor device capable of...

2006-02-07

2006-02-07

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S586000, C438S639000

Reexamination Certificate

active

06995056

ABSTRACT:
A method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process. The method includes the steps of: forming a plurality of conductive structures on a substrate; forming an etch stop layer and a flowable insulation layer on the plurality of conductive structures subsequently; forming a photoresist pattern on the flowable insulation layer; forming a plurality of contact holes by etching the flowable insulation layer with use of the photoresist pattern as an etch mask, thereby exposing portions of the etch stop layer; forming at least one barrier layer on the contact holes; removing said at least one barrier layer and the etch stop layer disposed at each bottom portion of the contact holes to thereby expose the substrate; and cleaning the contact holes.

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