Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-08-29

2006-08-29

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S164000, C438S788000, C438S792000

Reexamination Certificate

active

07098087

ABSTRACT:
It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high reliability using the technique. In the present invention a silicon oxide film is formed on a crystalline semiconductor film, which is formed on an insulating surface, by the sputtering method using silicon as a target by applying high-frequency power in an atmosphere containing oxygen or oxygen and a rare gas, a silicon nitride film is formed thereon by applying high-frequency power in an atmosphere containing nitrogen or nitrogen and a rare gas, and then, heat treatment of a stacked body of the crystalline semiconductor film, the silicon oxide film, and the silicon nitride film at a temperature higher than a temperature for forming the films is performed.

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Specification, Claims, Abstract and drawings of U.S. Appl. No. 10/439,295, filed May 16, 2003 entitledSilicon Nitride Film and Semiconductor Device, and Manufacturing Method Thereof.

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