Method of forming a protective layer over Cu filled...

Details Method of forming a protective layer over Cu filled... Method of forming a protective layer over Cu filled...

2006-12-05

2006-12-05

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S648000, C438S678000, C257SE21584, C257SE21586

Reexamination Certificate

active

07144811

ABSTRACT:
A method of forming a protective layer over a metal filled semiconductor feature to prevent metal oxidation including providing a semiconductor process wafer comprising an insulating dielectric layer having an opening for forming a semiconductor feature; blanket depositing a metal layer over the opening to substantially fill the opening; and, blanket depositing a protective layer comprising at least one of a oxidation resistant metal and metal nitride over the metal layer.

REFERENCES:
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6114238 (2000-09-01), Liao
patent: 6323121 (2001-11-01), Liu et al.
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6417093 (2002-07-01), Xie et al.
patent: 2002/0096775 (2002-07-01), Ning

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