Semiconductor devices and methods for fabricating the same

Details Semiconductor devices and methods for fabricating the same Semiconductor devices and methods for fabricating the same

2006-12-26

2006-12-26

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257SE21432

Reexamination Certificate

active

07153748

ABSTRACT:
Semiconductor devices having an elevated contact region and methods of fabricating the same are disclosed. A disclosed semiconductor device includes a semiconductor substrate, a gate on the semiconductor substrate, spacers on sidewalls of the gate, an epitaxial layer on the semiconductor substrate, source/drain regions within the semiconductor substrate below the epitaxial layer, and low doping concentration regions within the semiconductor below the spacers. In an example, the spacers partially overlap onto the epitaxial layer.

REFERENCES:
patent: 5319232 (1994-06-01), Pfiester
patent: 5683924 (1997-11-01), Chan et al.
patent: 6265272 (2001-07-01), Chen
patent: 6335251 (2002-01-01), Miyano et al.
patent: 6429084 (2002-08-01), Park et al.

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