Method and structure for buried circuits and devices

Details Method and structure for buried circuits and devices Method and structure for buried circuits and devices

2006-11-28

2006-11-28

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000

Reexamination Certificate

active

07141853

ABSTRACT:
A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device.Entire circuits can be designed around this technique.

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