Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S151000
Reexamination Certificate
active
07084462
ABSTRACT:
A first or primary field effect transistor (“FET”) is separated from a body contact thereto by one or more second FETs that are placed electrically in parallel with the first FET. In this way, the body of the first FET can be extended into the region occupied by the second FET to allow contact to be made to the body of the first FET. In one embodiment, the gate conductor of the first FET and a gate conductor of the second FET are integral parts of a unitary conductive pattern. The unitary conductive pattern is made desirably small, and can be made as small as the smallest predetermined linewidth for gate conductors on an integrated circuit which includes the body-contacted FET. In this way, area and parasitic capacitance are kept small.
REFERENCES:
patent: 5185280 (1993-02-01), Houston et al.
patent: 5298773 (1994-03-01), Woodruff
patent: 5317181 (1994-05-01), Tyson
patent: 5811855 (1998-09-01), Tyson et al.
patent: 5821769 (1998-10-01), Douseki
patent: 6154091 (2000-11-01), Pennings et al.
patent: 6177708 (2001-01-01), Kuang et al.
patent: 6310377 (2001-10-01), Maeda et al.
patent: 6387739 (2002-05-01), Smith, III
patent: 6433587 (2002-08-01), Assaderaghi et al.
patent: 2001/0041393 (2001-11-01), Hargrove et al.
patent: 2002/0014664 (2002-02-01), Mandelman et al.
patent: 2003/0132464 (2003-07-01), Yamaguchi et al.
Smith, III George E.
Warnock James D.
Crane Sara
Jaklitsch Lisa U.
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