Method for forming short-channel transistors

Details Method for forming short-channel transistors Method for forming short-channel transistors

2006-02-14

2006-02-14

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06998318

ABSTRACT:
A method for forming short-channel transistors, including removing a residual sacrificial layer pattern used to mask an LDD ion-implant layer through etching; forming second spacers on side walls where the residual sacrificial layer pattern is removed; forming a punch-stop ion implant layer between the second spacers; etching the first oxide layer, and forming a gate insulation layer; and forming a gate where the residual sacrificial layer pattern is removed.

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