Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

2006-12-26

2006-12-26

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S255000, C438S398000, C257S303000, C257S306000

Reexamination Certificate

active

07153751

ABSTRACT:
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

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