Method of improving short channel effect and gate oxide...

Details Method of improving short channel effect and gate oxide... Method of improving short channel effect and gate oxide...

2006-08-08

2006-08-08

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000, C438S798000, C257SE21176, C257SE21177

Reexamination Certificate

active

07087508

ABSTRACT:
A new method is provided for manufacturing a gate electrode. A layer of gate material, such as polysilicon, is deposited, patterned and etched, defining the poly gate electrode structure. LDD and pocket impurity implants are performed, the LDD profile is created by a rapid thermal anneal. Next and of critical importance to the invention, a N2or O2or N2based plasma treatment is performed to eliminate defects in the exposed surface of the silicon substrate and sidewalls of the defined gate electrode that occur as a result of the etch of the layer of gate material. Then gate spacers are formed.

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