Silicon controlled rectifier structure with improved punch...

Details Silicon controlled rectifier structure with improved punch... Silicon controlled rectifier structure with improved punch...

2006-06-20

2006-06-20

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S133000, C257S379000

Reexamination Certificate

active

07064397

ABSTRACT:
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the collector of the NPN transistor between the emitter and collector of the PNP transistor.

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Julian Z. Chen, Ajith Amerasekera and Tom Vrotsos, “Bipolar SCR ESD Protection Circuit for High Speed Submicron Bipolar/BiCMOS Circuits”, IEDM, pp. 337-340, (14.1.1-14.1.4), 1995, IEEE.

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