Method of fabricating non-volatile memory device

Details Method of fabricating non-volatile memory device Method of fabricating non-volatile memory device

2006-10-17

2006-10-17

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000

Reexamination Certificate

active

07122427

ABSTRACT:
The present invention provides a method of fabricating a non-volatile memory device, in which trench isolation can be achieved using an insulating layer that needs no separate removal process. The present invention includes sequentially forming a first insulating layer, a first conductor layer, and a second insulating layer on a semiconductor substrate, patterning the second insulating layer, the first conductor layer, and the first insulating layer to expose a prescribed portion of the semiconductor substrate, forming a trench having a prescribed depth in the semiconductor substrate by removing the exposed portion of the semiconductor substrate, forming a third insulating layer on the second insulating layer including the trench, planarizing the third insulating layer to remove the second insulating layer until the first conductor layer is exposed, forming a fourth insulating layer on the exposed first conductor layer and the remaining third insulating layer, and forming a second conductor layer on the fourth insulating layer.

REFERENCES:
patent: 2004/0266111 (2004-12-01), Lee
patent: 2005/0176200 (2005-08-01), Wang et al.

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