Memory device having a P+ gate and thin bottom oxide and...

Details Memory device having a P+ gate and thin bottom oxide and... Memory device having a P+ gate and thin bottom oxide and...

2006-02-07

2006-02-07

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S324000

Reexamination Certificate

active

06995423

ABSTRACT:
A non-volatile memory device includes a semiconductor substrate and an N-type source and drain within the substrate. An oxide-nitride-oxide (ONO) stack is formed over the substrate. The ONO stack includes a thin bottom oxide layer. A P+polysilicon gate electrode is formed over the ONO stack. The memory device is operative to perform a channel erase operation in which a pair of charge storing cells within the nitride layer are erased simultaneously.

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