Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-08-22

2006-08-22

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S151000

Reexamination Certificate

active

07094684

ABSTRACT:
It is an object of the present invention to suppress an influence of voltage drop due to wiring resistance to make an image quality of a display device uniform. In addition, it is also an object of the present invention to suppress delay due to a wiring for electrically connecting a driving circuit portion to an input/output terminal to improve an operation speed in the driving circuit portion.In the present invention, a wiring including copper for realizing lowered wiring resistance, subjected to microfabrication, is used as a wiring used for a semiconductor device and a barrier conductive film for preventing diffusion of copper is provided for a TFT as a part of the wiring including copper to form the wiring including copper without diffusion of copper into a semiconductor layer of the TFT. The wiring including copper is a wiring including a laminate film of at least a conductive film containing copper as its main component, subjected to microfabricaiton, and the barrier conductive film.

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