Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-11-14

2006-11-14

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S194000, C438S285000, C438S574000, C438S775000, C438S777000

Reexamination Certificate

active

07135416

ABSTRACT:
A method of manufacturing a semiconductor device including a gallium nitride related semiconductor. The method include preparing a substrate having surface of a gallium nitride related semiconductor; contacting the surface with atomic nitrogen, which is obtained by decomposing a nitrogen-containing gas in a catalytic reaction, to nitride the surface; and forming, on the surface, a gate electrode and source and drain electrodes opposing each other across the gate electrode.

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