Planarization through silylation

Details Planarization through silylation Planarization through silylation

1988-10-17

1989-09-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 1566591, 156904, B44C 122, C03C 1500, C03C 2506, B29C 3700

Patent

active

048678384

ABSTRACT:
Disclosed is a process for forming a planarized multilevel ship wiring structure. Starting from a substrate having thereon at least a metal stud serving as vertical wiring between two levels of metallization, a quartz layer is deposited, obtaining a non-planar structure. A thick planarizing photoactive photoresist is applied. The photoresist is converted by silylation process into a silicate having substantially the same etch rate as that of quartz. Silylation is accomplished by, for example, subjecting to resist to a bath of hexamethyldisilazane, hexamethylcyclotrisilazane, octamethylcyclotetrasilazane, N,N,dimethylaminotrimethylsilane or N,N,diethylaminotrimethylsilane, for a period of time determined by the thickness of the resist. Unwanted portions of the silylated resist and quartz are etched back at 1:1 etch rate ratio to the level of the stud.

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