Reducing gate dielectric material to form a metal gate...

Details Reducing gate dielectric material to form a metal gate... Reducing gate dielectric material to form a metal gate...

2006-12-05

2006-12-05

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C257SE21212, C257SE21279, C257SE21290

Reexamination Certificate

active

07144783

ABSTRACT:
In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have vertical portions that may be exposed to a reduction reaction. As a result of the reduction reaction, the vertical portions may be converted to metal, which adds to the existing gate electrode. In some cases, removing the vertical dielectric portions reduces fringe capacitance and may also advantageously slightly increased underdiffusion without adding heat, in some embodiments.

REFERENCES:
patent: 4557036 (1985-12-01), Kyuragi et al.
patent: 5904517 (1999-05-01), Gardner et al.
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 2004/0118697 (2004-06-01), Wen et al.
patent: 2005/0048791 (2005-03-01), Brask et al.

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