Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-11-07

2006-11-07

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S649000, C438S775000

Reexamination Certificate

active

07132328

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, an ONO1 HTO film and an ONO2 nitride film are sequentially formed on a polysilicon layer for floating gate and an oxide film for ONO3 is formed as a SiON film by oxidizing the surface of the ONO2 nitride film. Thus, the oxide film for ONO3 having a better film quality and a high dielectric constant compared to an existing HTO oxide film is formed. Accordingly, capacitance and a breakdown voltage are increased and charge leakage and retention properties are thus improved. Furthermore, it is possible to reduce the cost through reduction in process by replacing an ONO3 annealing process and a subsequent high temperature steam annealing process with a single process.

REFERENCES:
patent: 6218689 (2001-04-01), Chang et al.
patent: 06-310654 (1994-11-01), None

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