Silicon oxide gapfill deposition using liquid precursors

Details Silicon oxide gapfill deposition using liquid precursors Silicon oxide gapfill deposition using liquid precursors

2006-08-08

2006-08-08

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S771000, C438S774000

Reexamination Certificate

active

07087536

ABSTRACT:
A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.

REFERENCES:
patent: 4410559 (1983-10-01), Hamakawa et al.
patent: 4468413 (1984-08-01), Bachmann
patent: 4572841 (1986-02-01), Kaganowicz et al.
patent: 4690746 (1987-09-01), McInerney et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4890575 (1990-01-01), Ito et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5013691 (1991-05-01), Lory et al.
patent: 5037514 (1991-08-01), Yamazaki
patent: 5089442 (1992-02-01), Olmer
patent: 5156881 (1992-10-01), Okano et al.
patent: 5204141 (1993-04-01), Roberts et al.
patent: 5215787 (1993-06-01), Homma
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5288518 (1994-02-01), Homma
patent: 5302233 (1994-04-01), Kim et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5334552 (1994-08-01), Homma
patent: 5362526 (1994-11-01), Wang et al.
patent: 5385763 (1995-01-01), Okano et al.
patent: 5399529 (1995-03-01), Homma
patent: 5413967 (1995-05-01), Matsuda et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5420075 (1995-05-01), Homma et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5474589 (1995-12-01), Ohga et al.
patent: 5507881 (1996-04-01), Sichanugrist et al.
patent: 5525550 (1996-06-01), Kato
patent: 5563105 (1996-10-01), Dobuzinsky et al.
patent: 5571576 (1996-11-01), Qian et al.
patent: 5589233 (1996-12-01), Law et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5599740 (1997-02-01), Jang et al.
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5621241 (1997-04-01), Jain
patent: 5624582 (1997-04-01), Cain
patent: 5629043 (1997-05-01), Inaba et al.
patent: 5645645 (1997-07-01), Zhang et al.
patent: 5648175 (1997-07-01), Russell et al.
patent: 5661093 (1997-08-01), Ravi et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5710079 (1998-01-01), Sukarev
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5719085 (1998-02-01), Moon et al.
patent: 5776557 (1998-07-01), Okano et al.
patent: 5786039 (1998-07-01), Brouquet
patent: 5804259 (1998-09-01), Robles
patent: 5807785 (1998-09-01), Ravi
patent: 5849455 (1998-12-01), Ueda et al.
patent: 5850105 (1998-12-01), Dawson et al.
patent: 5858876 (1999-01-01), Chew
patent: 5869149 (1999-02-01), Denison et al.
patent: 5872052 (1999-02-01), Iyer
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5874350 (1999-02-01), Nakagawa
patent: 5903106 (1999-05-01), Young et al.
patent: 5910342 (1999-06-01), Hirooka et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5915190 (1999-06-01), Pirkle
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5939831 (1999-08-01), Fong et al.
patent: 5944902 (1999-08-01), Redeker et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5968610 (1999-10-01), Liu et al.
patent: 5976327 (1999-11-01), Tanaka
patent: 5990000 (1999-11-01), Hong et al.
patent: 5990013 (1999-11-01), Berenguer et al.
patent: 6013191 (2000-01-01), Nasser-Faili et al.
patent: 6013584 (2000-01-01), M'Saad
patent: 6030666 (2000-02-01), Lam et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6037018 (2000-03-01), Jang et al.
patent: 6039851 (2000-03-01), Iyer
patent: 6042901 (2000-03-01), Denison et al.
patent: 6059643 (2000-05-01), Hu et al.
patent: 6070551 (2000-06-01), Li et al.
patent: 6071573 (2000-06-01), Koemtzopoulos et al.
patent: 6074959 (2000-06-01), Wang et al.
patent: 6077786 (2000-06-01), Chakravarti et al.
patent: 6096646 (2000-08-01), Lee et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6149976 (2000-11-01), Matsuki et al.
patent: 6149986 (2000-11-01), Shibata et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6170428 (2001-01-01), Redeker et al.
patent: 6174808 (2001-01-01), Jang et al.
patent: 6182602 (2001-02-01), Redeker et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6189483 (2001-02-01), Ishikawa et al.
patent: 6190233 (2001-02-01), Hong et al.
patent: 6191026 (2001-02-01), Rana et al.
patent: 6194037 (2001-02-01), Terasaki et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6197705 (2001-03-01), Vassiliev
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6203863 (2001-03-01), Liu et al.
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6224950 (2001-05-01), Hirata
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6230650 (2001-05-01), Yamazaki
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6313010 (2001-11-01), Nag et al.
patent: 6326064 (2001-12-01), Denison et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6346302 (2002-02-01), Kishimoto et al.
patent: 6372291 (2002-04-01), Hua et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6416823 (2002-07-01), Li et al.
patent: 6448186 (2002-09-01), Olson et al.
patent: 6465044 (2002-10-01), Jain et al.
patent: 6503843 (2003-01-01), Xia et al.
patent: 6531193 (2003-03-01), Fonash et al.
patent: 6537929 (2003-03-01), Cheung et al.
patent: 6559026 (2003-05-01), Rossman et al.
patent: 6589610 (2003-07-01), Li et al.
patent: 6589611 (2003-07-01), Li et al.
patent: 6596653 (2003-07-01), Tan et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6607983 (2003-08-01), Chun et al.
patent: 6626188 (2003-09-01), Fitzsimmons et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6653203 (2003-11-01), Huang et al.
patent: 6673722 (2004-01-01), Yamazaki
patent: 6713390 (2004-03-01), M'Saad et al.
patent: 6740601 (2004-05-01), Tan et al.
patent: 6808748 (2004-10-01), Kapoor et al.
patent: 6812153 (2004-11-01), Hua et al.
patent: 2002/0192396 (2002-12-01), Wang et al.
patent: 2003/0056900 (2003-03-01), Li et al.
patent: 2003/0159656 (2003-08-01), Tan et al.
patent: 2003/0207580 (2003-11-01), Li et al.
patent: 2003/0219540 (2003-11-01), Law et al.
patent: 2004/0241342 (2004-12-01), Karim et al.
patent: 0 883 166 (1998-09-01), None
patent: 2 267 291 (1993-12-01), None
patent: 2058836 (1990-02-01), None
patent: 7-161703 (1995-06-01), None
Abraham, “Reactive Facet Tapering of Plasma Oxide For Multilevel Interconnect Applications,” VMIC Conference. pp. 115-121 (1987).
Alonso, J.C. et al., “High rate-low temperature deposition of silicon dioxide films by remote plasma enhanced chemical vapor deposition using silicon tetrachloride.” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Nov. 1995, vol. 13, Issue 6, pp. 2924-2929.
Bar-Ilan et al., “A comparative study of sub-micron gap filling and planarization techniques”, SPIE vol. 2636, Oct. 1995, . 277-288.
Broomfield et al., “HDP Dielectric BEOL Gapfill: A Process for Manufacturing”, IEEE/SEMI Advanced Semiconductor Manufacturing Conference 1996, pp. 255-258.
Conti et al., “Processing methods to fill High aspect ration gaps without premature constriction,” DUMIC Conference, Feb. 8-9, 1999, pp. 201-209.
Horiike et al., “High rate and highly selective Si02 etching employing inductively coupled plasma and discussion on reaction kinetics”, JVST A 13(3) May/Jun. 1995, pp. 801-809.
Kuo et al., “Thick SiO2 films obtained by

Affiliated with

Also associated with

Rating

Silicon oxide gapfill deposition using liquid precursors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon oxide gapfill deposition using liquid precursors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon oxide gapfill deposition using liquid precursors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3665944