Method of forming doped regions in the bulk substrate of an...

Details Method of forming doped regions in the bulk substrate of an... Method of forming doped regions in the bulk substrate of an...

2006-10-31

2006-10-31

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21545

Reexamination Certificate

active

07129142

ABSTRACT:
In one illustrative embodiment, the method comprises providing an SOI substrate comprised of an active layer, a buried insulation layer and a bulk substrate, forming a doped region in the bulk substrate under the active layer, forming a plurality of transistors above the SOI substrate in an area above the doped region and applying a voltage to the doped region to vary a threshold voltage of at least one of the plurality of transistors. In another illustrative embodiment, the method comprises providing a consumer product comprised of at least one integrated circuit product, the integrated circuit product being comprised of a plurality of transistors formed in an active layer of an SOI substrate above a doped region formed in a bulk substrate of the SOI substrate, the doped region being formed under the active layer, sensing an activity level of the integrated circuit product and applying a voltage of a magnitude and a polarity to the doped region, the magnitude and polarity of the applied voltage being determined based upon the sensed activity level of the integrated circuit product.

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