Methods of forming buried bit line DRAM circuitry

Details Methods of forming buried bit line DRAM circuitry Methods of forming buried bit line DRAM circuitry

2006-12-12

2006-12-12

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21488, C257SE21159

Reexamination Certificate

active

07148102

ABSTRACT:
A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously deposited to within the buried bit line forming trench, the bit line vias, and the memory storage node vias within the dielectric mass. Other aspects and implementations are contemplated.

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