Single crystal GaN substrate, method of growing single...

Details Single crystal GaN substrate, method of growing single... Single crystal GaN substrate, method of growing single...

2006-08-08

2006-08-08

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S084000, C117S085000, C117S090000, C117S094000

Reexamination Certificate

active

07087114

ABSTRACT:
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

REFERENCES:
patent: 6265322 (2001-07-01), Anselm et al.
patent: 6582986 (2003-06-01), Kong et al.
patent: 6667184 (2003-12-01), Motoki et al.
patent: 2004/0082150 (2004-04-01), Kong et al.
patent: 2004/0089919 (2004-05-01), Motoki et al.
patent: 0966047 (1999-12-01), None
patent: 1041610 (2000-10-01), None
patent: 1 088 914 (2001-04-01), None
patent: 1088914 (2001-04-01), None
patent: 9-298300 (1997-10-01), None
patent: 10-9008 (1998-01-01), None
patent: 10-102546 (1998-04-01), None
patent: WO 99/23693 (1999-05-01), None
patent: WO99/23693 (1999-05-01), None
Wu. J et al., “Selective growth of cubic GaN on patterned GaAs (100) substrates by metalorganic vapor phase epitaxy”, 3rd International Conference on Nitride Semiconductors. Montpellier, France, Jul. 4-9, 1999, 'Online!, vol. 176, No. 1, pp. 557-560, XP002228656.
Li, X et al., “Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition”, Proceedings of the 38th Electronic Materials Conference, Santa Barbara, CA, USA. Jun. 26-28, vol. 26, No. 3, pp. 306-310, XP009004611.
Kawaguchi, Y. et al., “Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten mask”, Gan and Related Alloys, Symposium, Gan and Related Alloys. Symposium, Boston, MA, USA, Nov. 30-Dec. 4, 1998, 'Online!, p. G4 1/6 pp. XP00228657.
Zhang, et al.. “Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy”, Gan and Related Alloys. Symposium. Gand and Related Alloys, Symposium, Boston, MA, USA. Nov. 30-Dec. 4, 1998, 'Online!, p. G4. 7/6 pp. XP002228658.
Kuan. T S et al., “Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy”, Gan and Related Alloys—1999.Symposium (Materials Research Society Symposium Proceedings vol. 595), Gan and Related Alloys—1999. Symposium, Boston, MA, USA, Nov. 28-Dec. 3, 1999. 'Online!, pp. W2.6.1-6. XP002228659.
Miyake, H et al., “Fabrication of GaN with buried tungsten (W) structures using epitaxial lateral overgrowth (ELO) via I.P-Movpe” Gan and Related Alloys—1999. Symposium (Materials Research Society Symposium Proceedings vol. 595). Gan and Related Alloys—1999, Symposium, Boston, MA, USA, Nov. 28-Dec. 3, 'Online! pp. W2.3.1.-6, XP002228660.
Usul, A “Growth of Thick Gan Layers by Hyride Vapor-Phase Epitaxy”, E;ectronics & Communications In Japan. Part II—Electronics, Scripta Technica, New York. US. vol. 81, No. 7, Jul. 1998, pp. 57-63, XP000835051.
Yoshiki, K., et al., “Selective Growth of Wurtzite Gan and Alxgai-XN on Gan/Sapphire Substrates by Metalorganic Vapor Phase Epitaxy”, Journal of Crystal Growth, North-Holland Publishing Co. Amsterdam, NL, vol. 144, No. 3/4, Dec. 2, 1994, pp. 133-140, XP000483655.
Beaumont. B. et al.; Lateral Overgrowth of Gan on Patterned Gan/SapphireSubstrate via Selective Metal organic Vapour Phase Epitaxy: A Route to Produce Self Supported Gan Substrates, Journal of Crystal Growth, North-Holland Publishing Co., Amsterdam, NL, vol. 189:190, Jun. 2, 1998, pp. 97-102, XP000667735.
Usui. A et al., “Thick Gan Epitaxial Growth With Low Disclocation Density By Hydride Vapor Phase Epitaxy”, Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics, Tokyo, JP, vol. 36., No. 7B, Part 2, Jul. 15, 1997, pp. L899-L902, XP000742410.
Akasaka, T et al., “Gan Hexagonal Microprisms with smooth Vertical Facets Fabricated by Selective Metalorganic Vapor Phase Epitaxy”, Applied Physics Letters, American Institute of Physics. New York, US, vol. 71, No. 15, Oct. 13, 1997, pp. 2196-2198, XP000725873.
Kapolnek, D et al. “Anisotropic Epitaxial Lateral Growth in Gan Selective Area Epitaxy”, Applied Physics Letters, American Institute of Physics, New York, US, vol. 71, No. 9, Sep. 1, 1997, pp. 1204-1206, XP000720234.
Powell, A.R. “New Approach to growth of low dislocation relaxed SIGe material.” Applied Physics Letter, 64 (14) Apr. 4, 1994, pp. 1856-1858.
Wu, Jun et al., “Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy” Department of Applied Physics, The University of Tokyo, XP-002228656.

Affiliated with

Also associated with

Rating

Single crystal GaN substrate, method of growing single... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single crystal GaN substrate, method of growing single..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single crystal GaN substrate, method of growing single... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3658945