Silicon-on-insulator (SOI) integrated circuit (IC) chip with...

Details Silicon-on-insulator (SOI) integrated circuit (IC) chip with... Silicon-on-insulator (SOI) integrated circuit (IC) chip with...

2006-06-27

2006-06-27

Geyer, Scott (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07067371

ABSTRACT:
The present invention provides SOI material which includes a top Si-containing layer which has regions of different thickness as well as a method of fabricating such SOI material. The inventive method includes a step of thinning predetermined regions of the top Si-containing layer by masked oxidation of silicon. SOI IC chips including the inventive SOI material having different types of CMOS devices build thereon as also disclosed.

REFERENCES:
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patent: 5740099 (1998-04-01), Tanigawa
patent: 6063652 (2000-05-01), Kim
patent: 6229179 (2001-05-01), Song et al.
patent: 6537891 (2003-03-01), Dennison et al.
patent: 6764917 (2004-07-01), Chan et al.
patent: 2001/0008284 (2001-07-01), Huang

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