Source side injection storage device with spacer gates and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

Other Related Categories

C438S258000, C438S266000, C438S267000

Type

Reexamination Certificate

Status

active

Patent number

07132329

Description

ABSTRACT:
A storage device structure (10) has two bits of storage per control gate (34) and uses source side injection (SSI) to provide lower programming current. A control gate (34) overlies a drain electrode formed by a doped region (22) that is positioned in a semiconductor substrate (12). Two select gates (49and50) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate (34). A source doped region (60) is positioned in the semiconductor substrate (12) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer (42) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists.

REFERENCES:
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6228695 (2001-05-01), Hsieh et al.
patent: 6400610 (2002-06-01), Sadd
patent: 6710287 (2004-03-01), Lu
patent: 7064030 (2006-06-01), Chindalore et al.
patent: 2004/0121540 (2004-06-01), Lin

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