Photomask designing method, pattern predicting method and...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

07139998

ABSTRACT:
A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a photosensitive substrate via a projection optical system, the photomask designing method comprises acquiring a transmittance characteristic of the projection optical system, the characteristic varing depending on a difference in optical paths of light in the projection optical system, the light passing through the projection optical system, and acquiring mask bias of the photomask by use of the transmittance characteristic of the projection optical system.

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Sato, K. et al., “Measuring Method of Illuminance Uneveness of Exposure Apparatus, Correcting Method of Illuminance Uneveness, Manufacturing Method of Semiconductor Device, and Exposure Apparatus”, U.S. Appl. No. 10/131,083, filed Apr. 25, 2002.
Notification of Reasons for Rejection in First Examination issued by the Taiwanese Patent Office in counterpart Taiwanese application, and English translation of Notice Dec. 22, 2004.

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