Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-06-10
2000-04-04
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438785, H01L 2170
Patent
active
060460814
ABSTRACT:
A method for forming the dielectric layer of a capacitor. A titanium layer and a tantalum pentoxide layer are sequentially formed over a polysilicon lower electrode. A high-temperature treatment is performed so that titanium in the titanium layer and silicon in the polysilicon lower electrode react to form a titanium silicide layer at their interface. Titanium in the titanium layer also reacts with oxygen in the atmosphere to form a titanium oxide layer at its interface with the tantalum pentoxide layer. The titanium silicide layer, the titanium oxide layer and the tantalum pentoxide layer together constitute a composite dielectric layer with a high dielectric constant capable of increasing the capacitance of the capacitor.
REFERENCES:
patent: 5290609 (1994-03-01), Horiike
patent: 5663088 (1997-09-01), Sandhu
patent: 5688724 (1997-11-01), Yoon
patent: 5837593 (1998-11-01), Park
Neilson, M.C, et al., "Low temperature deposition of high dielectric films using reactive pulsed DC magnetron sputtering", Dielectric Material Integration for Microelectronics, Pennington, NJ: Electrochem. Soc, 1998. p. 227-40. Conference: San Diego, CA, 1998.
Bowers Charles
United Microelectronics Corp.
Whipple Matthew
LandOfFree
Method for forming dielectric layer of capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming dielectric layer of capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming dielectric layer of capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-364493