Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-05-09

2006-05-09

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S230000, C438S232000

Reexamination Certificate

active

07041549

ABSTRACT:
In a method for manufacturing a semiconductor device, a gate insulating film and a gate electrode are first formed on a substrate. Next, Ge ions, Si ions, or the like are implanted to make the surface of the substrate amorphous, using the gate electrode as a mask. Thereafter, impurities such as B ions or the like, for forming a doped region, are implanted into the amorphous area of the substrate, using the gate electrode as a mask. Furthermore, the doped region is irradiated with visible light for a short period of time.

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