Semiconductor memory device and method of producing the same

Details Semiconductor memory device and method of producing the same Semiconductor memory device and method of producing the same

2006-06-20

2006-06-20

Tran, Minhloan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S241000, C438S243000, C438S244000, C438S387000

Reexamination Certificate

active

07064029

ABSTRACT:
A semiconductor memory device has access transistors with a gate and a pair of impurity diffusion layers formed on a semiconductor substrate and memory capacitors with a storage node electrode and a cell plate electrode. The electrodes are connected to each other via a capacitive insulating layer made of a ferroelectric material. The storage node electrode has a surface covered with the capacitive insulating layer and is formed in a shape of column on one of the pair of impurity diffusion layers in a hole formed from an inter-layer insulating film covering the access transistor to the one of the pair of impurity diffusion layers. A upper surface of the column does not exceed the inter-layer insulating film. The storage node electrode formed in the hole face the cell plate electrode via the inter-layer insulating film.

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