Method for patterning a semiconductor region

Details Method for patterning a semiconductor region Method for patterning a semiconductor region

2006-08-15

2006-08-15

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C438S618000

Reexamination Certificate

active

07091081

ABSTRACT:
A method is provided for patterning a semiconductor region, which can be heavily doped. A patterned mask is provided above the semiconductor region. A portion of the semiconductor region exposed by the patterned mask is etched in an environment including a polymerizing fluorocarbon, e.g., a chlorine-free fluorocarbon having a high ratio of carbon to fluorine atoms, and at least one non-polymerizing substance selected from the group consisting of non-polymerizing fluorocarbons, e.g. those having a low ratio of carbon to fluorine atoms, and hydrogenated fluorocarbons. The method preferably passivates the sidewalls of the patterned semiconductor region, such that a lower region of semiconductor material below the patterned region can be directionally etched without eroding the thus passivated patterned region.

REFERENCES:
patent: 4069096 (1978-01-01), Reinberg et al.
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4741799 (1988-05-01), Chen et al.
patent: 5790354 (1998-08-01), Hause et al.
patent: 2003/0018096 (2003-01-01), Nallan et al.
patent: 2003/0211684 (2003-11-01), Guo

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