Test structure for locating electromigration voids in dual...

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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Reexamination Certificate

active

06995392

ABSTRACT:
A test structure is disclosed for locating electromigration voids in a semiconductor interconnect structure having an interconnect via interconnecting a lower metallization line with an upper metallization line. In an exemplary embodiment, the test structure includes a via portion the top of the interconnect via at the upper metallization line. In addition, a line portion extends from the via portion, wherein the line portion connects to an external probing surface, in addition to a probing surface on the lower metallization line, thereby allowing the identification of any electromigration voids present in the interconnect via.

REFERENCES:
patent: 5057441 (1991-10-01), Gutt et al.
patent: 5510293 (1996-04-01), Numata
patent: 5519250 (1996-05-01), Numata
patent: 5625232 (1997-04-01), Numata
patent: 5675187 (1997-10-01), Numata et al.
patent: 5751056 (1998-05-01), Numata
patent: 5777486 (1998-07-01), Hsu
patent: 5814560 (1998-09-01), Cheung et al.
patent: 5874777 (1999-02-01), Ohmi et al.
patent: 5880018 (1999-03-01), Boeck et al.
patent: 6034420 (2000-03-01), Tran
patent: 6051491 (2000-04-01), Ito
patent: 6072945 (2000-06-01), Aji
patent: 6083850 (2000-07-01), Shields
patent: 6090698 (2000-07-01), Lee
patent: 6124198 (2000-09-01), Moslehi
patent: 6146985 (2000-11-01), Wollesen
patent: 6159756 (2000-12-01), Yamada
patent: 6288556 (2001-09-01), Sato et al.
patent: WO 99/54934 (1999-10-01), None
Bin Zhao, “Advanced Interconnect Systems for ULSI Technology,” Proc. 5thInternational Conf. on Solid State & IC Technology, (1998), pp. 87-89.

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