Flash memory device and a fabrication process thereof,...

Details Flash memory device and a fabrication process thereof,... Flash memory device and a fabrication process thereof,...

2006-02-14

2006-02-14

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257S314000

Reexamination Certificate

active

06998355

ABSTRACT:
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.

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