Magnetic random access memory (MRAM) cells having split...

Details Magnetic random access memory (MRAM) cells having split... Magnetic random access memory (MRAM) cells having split...

2006-02-21

2006-02-21

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C257S421000, C438S003000, C438S240000, C365S097000, C365S158000

Reexamination Certificate

active

07002195

ABSTRACT:
Magnetic random access memory cells having split sub-digit lines include a pair of sub-digit lines disposed over a semiconductor substrate. The pair of sub-digit lines are spaced apart from each other when viewed from a top plan view. A magnetic resistor is disposed over the pair of sub-digit lines. The magnetic resistor is disposed to overlap with the pair of sub-digit lines. The magnetic resistor is electrically connected to a predetermined region of the semiconductor substrate through a magnetic resistor contact hole that penetrates a gap region between the pair of sub-digit lines.

REFERENCES:
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6560135 (2003-05-01), Matsuoka et al.
patent: 6890770 (2005-05-01), Grynkewich et al.
patent: 2002/0036917 (2002-03-01), Nishimura et al.
patent: 2003/0117835 (2003-06-01), Kim et al.
patent: 2002-176150 (2002-06-01), None

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