Method for manufacturing flash memory device and flash...

Details Method for manufacturing flash memory device and flash... Method for manufacturing flash memory device and flash...

2006-08-01

2006-08-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S265000

Reexamination Certificate

active

07084031

ABSTRACT:
The present invention relates to a method for manufacturing a flash memory device and a flash memory device manufactured by the same. In the present invention, an annealing process of a tunnel insulating film is performed at a relatively low temperature to optimize the threshold voltage of a NHVN transistor. Furthermore, in case of portions not compensated through the annealing process of the tunnel insulating film, the quality of the tunnel insulating film is compensated through a subsequent liner oxide film deposition process and a HDP oxide film annealing process. Therefore, the present invention can improve reliability of the tunnel insulating film and thus provide a flash memory device having good properties.

REFERENCES:
patent: 6620681 (2003-09-01), Kim et al.
patent: 6914013 (2005-07-01), Chung
patent: 2004/0082129 (2004-04-01), Nagata
patent: 2002-208629 (2002-07-01), None

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