Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-28
2006-11-28
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S682000
Reexamination Certificate
active
07141467
ABSTRACT:
A semiconductor device includes a p-type well region, n+-type diffusion regions formed in the surface region of the p-type well region, a gate electrode containing silicon and formed above the p-type well region with a gate insulating film disposed therebetween, and NiSi films formed in the surface regions of the n+-type diffusion regions. In the semiconductor device, p-type impurity is doped in the depth direction from the surface of the NiSi film and the impurity profile of p-type impurity is so formed that a peak concentration of not lower than 1E20 cm−3will be provided in a preset depth position of the NiSi film and the concentration in the interface between the NiSi film and the n+-type diffusion region and the concentration in a position deeper than the interface will not be higher than 5E19 cm−3.
REFERENCES:
patent: 5170242 (1992-12-01), Stevens et al.
patent: 6235568 (2001-05-01), Murthy et al.
patent: 6372585 (2002-04-01), Yu
patent: 6790723 (2004-09-01), Tanaka et al.
A.S.W. Wong, et al., “Enhanced Thermal Stability of NiSi Films on 20KEV BF2+ Implanted (100) Si”, Symposium B Silicon Material-Processing, Characterization and Reliability, MRS 2002 Spring Meeting, Apr. 1-5, 2002, 1 Page.
T. Ohguro, et al., “Analysis of Anomalously Large Junction Leakage Current of Nickel Silicided N-Type Diffused Layer and Its Improvement”, Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, 1993 pp. 192-194.
Hokazono Akira
Ohuchi Kazuya
Kabushiki Kaisha Toshiba
Owens Douglas W.
LandOfFree
Semiconductor device having metal silicide films formed on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having metal silicide films formed on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having metal silicide films formed on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3630153