Fabrication of dielectric for a nonvolatile memory cell...

Details Fabrication of dielectric for a nonvolatile memory cell... Fabrication of dielectric for a nonvolatile memory cell...

2006-06-13

2006-06-13

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S266000, C438S593000

Reexamination Certificate

active

07060565

ABSTRACT:
A memory cell (110) has a select gate (140) and at least two floating gates (160). A gate dielectric (150) for the floating gates (160) is formed by thermal oxidation simultaneously with as a dielectric on a surface of the select gate (140). The dielectric thickness on the select gate is controlled by the dopant concentration in the select gate. Other features are also provided.

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