Light-emitting semiconductor device using Group III nitride...

Details Light-emitting semiconductor device using Group III nitride... Light-emitting semiconductor device using Group III nitride...

2006-05-16

2006-05-16

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

Reexamination Certificate

active

07045829

ABSTRACT:
A Group III nitride compound semiconductor includes a multiple layer structure having an emission layer between an n-type cladding layer and a p-type cladding layer. The n-type cladding layer may be below the emission layer, having been formed on another n-type layer which was formed over a buffer Layer and a sapphire substrate. The emission layer has a thickness which is wider than the diffusion length of holes within the emission layer. The n-type cladding layer is doped with a donor impurity and has a lattice constant Substantially equal to a lattice constant of the emission layer. The p-type cladding layer is doped with an acceptor impurity and has a forbidden band sufficiently wider than the forbidden band of the emission layer in ordor to confine electrons injected into the emission layer.

REFERENCES:
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5076860 (1991-12-01), Ohba et al.
patent: 5173751 (1992-12-01), Ota et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5428634 (1995-06-01), Bryan et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5650641 (1997-07-01), Sassa et al.
patent: 5652438 (1997-07-01), Sassa et al.
patent: 5670798 (1997-09-01), Schetzina
patent: 5700713 (1997-12-01), Yamazaki et al.
patent: 5862167 (1999-01-01), Sassa et al.
patent: 59-228776 (1984-12-01), None
patent: 1-17484 (1989-01-01), None
patent: 2-229475 (1990-09-01), None
Sze, Physics of Semiconductor Devices, 1981,John Wiley, 2ndEdition, pp709-710.
Japanese Office Action dated Feb. 3, 2004, with Partial English translation.

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