Self-aligned contact structure and process for forming...

Details Self-aligned contact structure and process for forming... Self-aligned contact structure and process for forming...

2006-05-02

2006-05-02

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S637000

Reexamination Certificate

active

07037774

ABSTRACT:
A CMOS structure and a process for forming CMOS devices are disclosed in which gate film stacks are formed over a semiconductor substrate. A barrier layer and a first dielectric film are formed such that they extend over the gate film stacks. Metal lines are formed over the pre-metal dielectric film and spacers are formed that extend on opposite sides of the metal lines. A second dielectric film is formed that extends over the metal lines. A masking structure is formed that defines a contact opening. Selective etch processes are performed to form a self-aligned contact opening, with the adjacent metal lines and spacers aligning the self-aligned contact opening between adjacent gate film stacks. A metal layer is then deposited and planarized to form a self-aligned contact. The masking structure can also define additional contact openings, which are simultaneously etched and filled with metal to form borderless, strapped and shared contacts. These borderless contacts, contacts and shared contacts can either be aligned on one side or can be positioned using only the masking structure.

REFERENCES:
patent: 5874359 (1999-02-01), Liaw et al.
patent: 6074955 (2000-06-01), Lin et al.
patent: 6165879 (2000-12-01), Lee et al.
patent: 6225203 (2001-05-01), Liu et al.
patent: 6255168 (2001-07-01), Gau
patent: 6479873 (2002-11-01), Yoshiyama et al.
patent: 6498088 (2002-12-01), Trivedi
patent: 6534414 (2003-03-01), Wang et al.
patent: 6777305 (2004-08-01), Lee et al.
patent: 6787465 (2004-09-01), Juengling
patent: 6803318 (2004-10-01), Qiao et al.
patent: 2004/0038546 (2004-02-01), Ko

Affiliated with

Also associated with

Rating

Self-aligned contact structure and process for forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned contact structure and process for forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned contact structure and process for forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3627640