Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S421000, C257S422000, C257S903000, C257S904000, C365S158000, C365S171000, C438S003000, C438S257000
Reexamination Certificate
active
07005691
ABSTRACT:
A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.
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Deguchi Masahiro
Hiramoto Masayoshi
Matsukawa Nozomu
Odagawa Akihiro
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
Nelms David
Tran Long
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