Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-06-13

2006-06-13

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

07060581

ABSTRACT:
A method for manufacturing a semiconductor device, includes forming a first impurity implanted layer in a semiconductor substrate by selectively implanting ions of a first impurity. A dummy pattern is formed on a surface of the semiconductor substrate above the first impurity implanted layer. A second impurity implanted layer is formed in the semiconductor substrate by implanting ions of a second impurity. An interlevel insulating film is buried on the surface of the semiconductor substrate so as to planarize at the level of the dummy pattern. Ions of the first and second impurities are activated by irradiating the semiconductor substrate with a pulsed light at a pulse width of 0.1 ms to 100 ms. An opening is formed by selectively removing the dummy pattern. A gate insulating film and a gate electrode are formed on the exposed surface of the semiconductor substrate.

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U.S. Patent Application for Kyoichi Suguro et al., U.S. Appl. No. 10/661,564, filed Sep. 15, 2003.

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