Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-10
2006-10-10
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000
Reexamination Certificate
active
07119001
ABSTRACT:
Semiconductor chip packages of a wafer level and method for fabricating the same are disclosed, in which a wafer electrode pad is connected with an external circuit by a via-electrode penetrating a silicon wafer. An illustrated example package includes a wafer having a first surface and a second surface opposite the first surface; a semiconductor device having at least one of electrode pad on the first surface; a protective layer covering the first surface of the silicon wafer; a via-hole from the second surface to the electrode pad on the first surface, a via electrode within the via-hole; and a solder ball or a solder bump on the second surface for electrical connection between the via-electrode and an external circuit.
REFERENCES:
patent: 5851845 (1998-12-01), Wood et al.
patent: 6221769 (2001-04-01), Dhong et al.
patent: 2003-56174 (2003-07-01), None
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Geyer Scott B.
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