Method of fabricating a multiple T-gate MOSFET device

Details Method of fabricating a multiple T-gate MOSFET device Method of fabricating a multiple T-gate MOSFET device

1998-04-13

2000-03-07

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438305, 438294, 438279, 438283, 438197, 438270, H01L 21336, H01L 218234

Patent

active

060339594

ABSTRACT:
A method of fabricating a MOSFET device with a multiple T-shaped gate has the following steps. A substrate with an active region and a non-active region is provided, wherein the active region has a plurality of trenches, and the non-active region has a plurality shallow trench isolation structures. A thin insulating layer and a conducting layer are formed in the trenches. The conducting layer is defined to form a gate. The device is implanted with first ions. Then, the device is further implanted with second ions by using a mask, wherein the mask expose the trenches of the active region, and the opening of the mask is wider than the trench. The MOSFET device has at least the following structures. There is a substrate with an active region and a non-active region, wherein the active region has a plurality of trenches and the non-active region has a plurality of shallow trench isolation structures. There is a multiple T-shaped gate with a first part and a second part, wherein the first part is formed between two trenches on the substrate and the second part is formed in the trenches of the active region. There is a source/drain region with a shallow doped region and a deep doped region. The multiple T-shaped gate increases the channel width of the MOSFET device and decreases the short channel effect of the high integrity ICs.

REFERENCES:
patent: 4835584 (1989-05-01), Lancaster

Affiliated with

Also associated with

Rating

Method of fabricating a multiple T-gate MOSFET device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a multiple T-gate MOSFET device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a multiple T-gate MOSFET device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-362429