Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07087954
ABSTRACT:
Structures and methods for in service programmable logic arrays with low tunnel barrier interpoly insulators are provided. The in-service programmable logic array includes a first logic and a second logic plan having a number of logic cells arranged in rows and columns that are interconnected to produce a number of logical outputs such that the in service programmable logic array implements a logical function. The logic cell includes a first source/drain region and a second source/drain region separated by a channel region in a substrate. A floating gate opposing the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of PbO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5and/or a Perovskite oxide tunnel barrier.
REFERENCES:
patent: 4295150 (1981-10-01), Adam
patent: 4412902 (1983-11-01), Michikami et al.
patent: 4556975 (1985-12-01), Smith et al.
patent: 4672240 (1987-06-01), Smith et al.
patent: 4688078 (1987-08-01), Hseih
patent: 4757360 (1988-07-01), Faraone et al.
patent: 4780424 (1988-10-01), Holler
patent: 4939559 (1990-07-01), DiMaria et al.
patent: 5042011 (1991-08-01), Casper et al.
patent: 5071782 (1991-12-01), Mori
patent: 5073519 (1991-12-01), Rodder
patent: 5153880 (1992-10-01), Owen et al.
patent: 5280205 (1994-01-01), Green et al.
patent: 5350738 (1994-09-01), Hase et al.
patent: 5353431 (1994-10-01), Doyle et al.
patent: 5399516 (1995-03-01), Bergendahl et al.
patent: 5418389 (1995-05-01), Watanabe
patent: 5474947 (1995-12-01), Chang et al.
patent: 5488612 (1996-01-01), Heybruck
patent: 5497494 (1996-03-01), Combs et al.
patent: 5498558 (1996-03-01), Kapoor
patent: 5508544 (1996-04-01), Shah
patent: 5600592 (1997-02-01), Atsumi et al.
patent: 5618575 (1997-04-01), Peter
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5619051 (1997-04-01), Endo
patent: 5619642 (1997-04-01), Nielsen et al.
patent: 5627785 (1997-05-01), Gilliam et al.
patent: 5677867 (1997-10-01), Hazani
patent: 5691209 (1997-11-01), Liberkowski
patent: 5691230 (1997-11-01), Forbes
patent: 5739544 (1998-04-01), Yuki et al.
patent: 5801401 (1998-09-01), Forbes
patent: 5852306 (1998-12-01), Forbes
patent: 5880991 (1999-03-01), Hsu et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 5936274 (1999-08-01), Forbes et al.
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 5959465 (1999-09-01), Beat
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5986932 (1999-11-01), Ratnakumar et al.
patent: 5991225 (1999-11-01), Forbes et al.
patent: 6009011 (1999-12-01), Yamauchi
patent: 6025228 (2000-02-01), Ibok et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6069380 (2000-05-01), Chou et al.
patent: 6069816 (2000-05-01), Nishimura
patent: 6077745 (2000-06-01), Burns et al.
patent: 6124729 (2000-09-01), Noble et al.
patent: 6134175 (2000-10-01), Forbes et al.
patent: 6135175 (2000-10-01), Gaudreault et al.
patent: 6141238 (2000-10-01), Forbes et al.
patent: 6141248 (2000-10-01), Forbes et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6153468 (2000-11-01), Forbes et al.
patent: 6163049 (2000-12-01), Bui
patent: 6169306 (2001-01-01), Gardner et al.
patent: 6208164 (2001-03-01), Noble et al.
patent: 6210999 (2001-04-01), Gardner et al.
patent: 6229175 (2001-05-01), Uchida
patent: 6238976 (2001-05-01), Noble et al.
patent: 6246606 (2001-06-01), Forbes et al.
patent: 6249020 (2001-06-01), Forbes et al.
patent: 6249460 (2001-06-01), Forbes et al.
patent: 6306708 (2001-10-01), Peng
patent: 6307775 (2001-10-01), Forbes et al.
patent: 6317364 (2001-11-01), Guterman et al.
patent: 6323844 (2001-11-01), Yeh et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6351411 (2002-02-01), Forbes et al.
patent: 6377070 (2002-04-01), Forbes
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6461931 (2002-10-01), Eldridge
patent: 6475857 (2002-11-01), Kim et al.
patent: 6504207 (2003-01-01), Chen et al.
patent: 6514842 (2003-02-01), Prall et al.
patent: 6541280 (2003-04-01), Kaushik et al.
patent: 6574143 (2003-06-01), Nakazato
patent: 6586797 (2003-07-01), Forbes et al.
patent: 6730575 (2004-05-01), Eldridge
patent: 6740928 (2004-05-01), Yoshii et al.
patent: 6754108 (2004-06-01), Forbes
patent: 6952032 (2005-10-01), Forbes et al.
patent: 2001/0013621 (2001-08-01), Kazuo
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 2002/0008324 (2002-01-01), Shinkawata
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0137250 (2002-09-01), Nguyen et al.
patent: 2005/0169054 (2005-08-01), Forbes
Arya, S., et al, “Conduction Properties of Thin Al2O3Films”,Thin Solid Films, 91, (1982), pp. 363-374.
Dipert, Brian et al, “Flash Memory Goes Mainstream”,IEEE Spectrum, 30, (Oct., 1993), pp. 48-52.
Eldridge, J.M. et al, “Growth of Thin PbO Layers on Lead Films”,Surface Science, 40, (1973), pp. 512-530.
Eldridge, J.M. el al, “Measurement of Tunnel Current Density in a Metal-Oxide-Metal System as a Function of Oxide Thickness”,Proc. 12th Intern. Conf. on Low Temperature Physics, (1971), pp. 427-428.
Greiner, J.H., “Josephson Tunneling Barriers by rf Sputter Etching in an Oxygen Plasma”,Journal of Applied Physics, vol. 42, No. 12, (Nov., 1971), pp. 5151-5155.
Greiner, J.H., “Oxidation of lead films by rf sputter etching in an oxygen plasma”,Journal of Applied Physics, vol. 45, No. 1, (Jan., 1974), pp. 32-37.
Grimblot, J. et al, “I. Interaction of Al Films with O2at Low Pressures”,J. Electrochem. Soc., vol. 129, No. 10, pp. 2366-2368, Oct., 1982.
Grimblot, J. et al, “II. Oxidation of Aluminum Films”,J. Electrochem. Soc., vol. 129, No. 10, (Oct., 1982), pp. 2369-2372.
Gundlach, K. et al, “Logarithmic Conductivity of Al-Al2O3-Al Tunneling Junctions Produced by Plasma and by Thermal Oxidation”,Surface Science, 27, (1971), pp. 125-141.
Hodges, D.A. et al,Analysis and Design of Digital Integrated Circuits, McGraw-Hill Book Company, 2nd Edition, (1988), pp. 394-396.
Hurych, Z., “Influence of Non-Uniform Thickness of Dielectric Layers on Capacitance and Tunnel Currents”,Solid-State Electronics, vol. 9, (1966), pp. 967-979.
Kubaschewski, O. et al,Oxidation of Metals and Alloys, Butterworths, London, (1962), pp. 53-63.
Luan, H.F. et al, “High Technology Ta205Gate Dielectrics with Tox,eq<10Å”,IEDM, (1999), pp. 141-144.
Ma, T. P., et al, “Tunneling Leakage Current in Ultrathin (<4 nm) Nitride/Oxide Stack Dielectrics,”IEEE Electron Device Letters, vol. 19, No. 10, pp. 388-390, Oct., 1998.
Masuoka, F. et al, “A 256K Flash EEPROM using Triple Polysilicon Technology”,IEEE International Solid-State Circuits Conference, Digest of Technical Papers, (1985), pp. 168-169.
Masuoka, F. et al, “A New Flash EEPROM Cell using Triple Polysilicon Technology”,International Electron Devices Meeting, Technical Digest, San Francisco, CA, (1984), pp. 464-467.
Mori, S., “Reliable CVD Inter-Poly Dielectrics for Advanced E&EEPROM”,Symposium on VSLI Technology, Digest of Technical Papers, (1985), pp. 16-17.
Pashley, R. et al, “Flash Memories: the best of two worlds”,IEEE Spectrum, (Dec., 1989), pp. 30-33.
Pollack, S. et al, “Tunneling Through Gaseous Oxidized Films of Al2O3”,Transactions of the Metallurgical Society of AIME, vol. 233, (Mar., 1965), pp. 497-501.
Simmons, J., “Generalized Formula for the Electric Tunnel Effect between Similiar Electrodes Separated by a Thin Insulating Film”,Journal of Applied Physics, vol. 34, No. 6, (1963), pp. 1793-1803.
Sze, S.,Physics of Semiconductor Devices, Second Edition, John Wiley & Sons, New York, (1981), pp. 553-556.
Afanas'Ev, V , et al., “El
Booth Richard A.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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