Method to form contactless array for high density nonvolatile me

Details Method to form contactless array for high density nonvolatile me Method to form contactless array for high density nonvolatile me

1997-09-23

2000-03-07

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438263, H01L 218247

Patent

active

06033956&

ABSTRACT:
A method of forming contactless array for high density ROM. After floating gates and N.sup.+ buried bit lines are formed, LPD oxide is deposited over the N.sup.+ buried bit lines. Then, a thin oxide layer and a thin nitride layer are successively grown on the floating gates. Moreover, another oxidation process is performed to reoxidize the thin nitride film to become an oxynitride film. Next, a second N.sup.+ polysilicon layer is deposited to form control gates.

REFERENCES:
patent: 4720323 (1988-01-01), Sato
patent: 5472898 (1995-12-01), Hong et al.
patent: 5523251 (1996-06-01), Hong
patent: 5693551 (1997-12-01), Su et al.
patent: 5770501 (1998-06-01), Hong

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