Method of fabricating flash memory cell

Details Method of fabricating flash memory cell Method of fabricating flash memory cell

1997-08-08

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438263, H01L 21336

Patent

active

060339543

ABSTRACT:
A method of fabricating a flash memory cell includes the steps of ion-implanting impurity into a substrate to form a buried region having a striped shape extending in a first direction (Y), depositing an insulating layer on the substrate and selectively etching the insulating layer to form a field insulating layer and a plurality of contact holes that expose the substrate in a matrix form. The method further includes forming a gate insulating layer on the exposed substrate in the contact holes, forming self-aligned floating gate on the gate insulating layer in the contact holes, forming an interlevel insulating layer on the floating gate, and forming a plurality of control gates having a striped shape extending in a second direction (X) that crosses the first direction on the interlevel insulating layer.

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