Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-05-09

2006-05-09

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S714000, C438S717000, C438S723000, C438S724000, C438S725000

Reexamination Certificate

active

07041602

ABSTRACT:
A method of fabricating a semiconductor device includes forming an interlayer insulating film on a semiconductor element; forming a polysilicon layer on the interlayer insulating film; implanting dopant atoms into the polysilicon layer; forming a resist layer on the polysilicon layer; forming one or more first openings in the resist layer; etching the polysilicon layer using the resist layer as a first mask, thereby forming one or more second openings in the polysilicon layer; and forming one or more contact holes in the interlayer insulating film using at least the polysilicon layer as a second mask.

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