Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-06-27
2006-06-27
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189090
Reexamination Certificate
active
07068555
ABSTRACT:
An address identifying memory block is match-compared with address information stored in a to-be-remedied block memory section in a block redundancy judge section. A redundant block select signal is outputted from the block redundancy judge section by judgment of address match. A memory block column select section selects a memory block column having a redundant memory block irrespective of an address signal as the redundant block select signal is activated if block redundancy is activated to output a memory block column select signal. A column redundancy memory section selects address information of column redundancy relating a redundant memory block arranged in a memory block column in accordance with the memory block column select signal.
REFERENCES:
patent: 6397313 (2002-05-01), Kasa et al.
patent: 6418051 (2002-07-01), Manstretta et al.
patent: 6563732 (2003-05-01), Matarrese et al.
patent: 6594177 (2003-07-01), Matarrese et al.
patent: 6643196 (2003-11-01), Sugio
patent: 6711074 (2004-03-01), Kwon
patent: 2002/0001237 (2002-01-01), Manstretta et al.
patent: 2002/0012282 (2002-01-01), Saito et al.
patent: 06-150670 (1994-05-01), None
patent: 06-163856 (1994-06-01), None
patent: 09-128962 (1997-05-01), None
patent: 2001-229691 (2001-08-01), None
patent: 2002-269994 (2002-09-01), None
patent: 2003-109389 (2003-04-01), None
Toru Tanzawa, et al., 44-mm2Four-Bank Eight-Word Page-Read 64-Mb Flash Memory With Flexible Block Redundancy and Fast Accurate Word-Line Voltage Controller, IEEE Journal of Solid-State Circuits, vol., 37 No. 11, p., 1485-1492, Nov. 2002.
Furuyama Takaaki
Nagao Mitsuhiro
Sugimoto Satoru
Dinh Son T.
Ingrassia Fisher & Lorenz PC
Spansion LLC
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