Method of making electrical connections to hermetically...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S071000, C438S121000, C257S684000

Reexamination Certificate

active

07037745

ABSTRACT:
In the manufacture of a MEMS device having a semiconductor-on-insulator substrate with a first portion closed by a lid to provide a hermetically sealed region and an second portion external to said hermetically sealed region, a method of providing electrical connections to said hermetically sealed region comprising forming at least one continuous deep trench in said semiconductor and extending down to said insulator, said at least one deep trench surrounding and isolating at least one block of semiconductor within said substrate, and said at least one block of semiconductor extending form within said first region to said second region; depositing an insulating layer in said trenches and over the surface of said substrate; depositing a metal ring around said first region; sealing said lid to said metal ring; and attaching a contact to said at least one block of semiconductor in said second region to provide one or more electrical connections through said at least one block of semiconductor to one or more components of said MEMS device within said hermetically sealed ring.

REFERENCES:
patent: 6121552 (2000-09-01), Brosnihan et al.
patent: 6777263 (2004-08-01), Gan et al.
patent: 2003/0161576 (2003-08-01), Blair et al.
patent: 2003/0190776 (2003-10-01), Wong et al.

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