Method of chemically etching TiW and/or TiWN

Details Method of chemically etching TiW and/or TiWN Method of chemically etching TiW and/or TiWN

1987-08-28

1988-11-29

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156664, 437183, 437192, 437246, H01L 2128, H01L 21308

Patent

active

047879580

ABSTRACT:
A method of chemically etching TiW and/or TiWN is described wherein the etching of a semiconductor substrate having a layers of TiWN, TiW and Au disposed between the substrate and a Au bump is performed with a 30% solution of hydrogen peroxide (H.sub.2 O.sub.2) at a temperature of approximately 90.degree. C.

REFERENCES:
patent: 3992235 (1976-11-01), Garbarini
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4381215 (1983-04-01), Reynolds et al.
patent: 4443295 (1984-04-01), Radigan et al.
patent: 4491860 (1985-01-01), Lim
patent: 4597003 (1986-06-01), Aine et al.
patent: 4668335 (1987-05-01), Mockler et al.
patent: 4711701 (1987-12-01), McLevite

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